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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA959
DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 100 150 -65~200 ae ae UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.98 UNIT ae /W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA959
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-100
V
V(BR)CBO V(BR)EBO
Collector-base breakdown voltage
IC=-1m A ;IE=0 IE=-1mA ;IC=0
Emitter-base breakdown voltage
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-5V
30
200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA959
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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